LM5175PWPR is a high-voltage, low-side switch IC that provides high-side switch protection for output voltage control in high-voltage DC/DC converters. The IC features a high-side FET output that is protected from overcurrent and short-circuit conditions, as well as input-output voltage feedforward and hysteresis for optimal control performance.

Key features include soft-switching operation with low noise and low losses, protection of the high-side FET against short-circuit loads and overcurrents, and advanced control functions such as voltage feedforward and hysteresis control. The LM5175PWPR is suitable for use in various DC/DC converter topologies such as half-bridge, full-bridge, push-pull, and single-ended converter circuits for AC or DC output applications up to 200V.

The LM5175PWPR has been designed for easy system integration, using the NMOS FET technology of silicon-carbide SiC substrates with a surface density of up to 350Rdm²( @124 μm SOI layer), a thickness of up to 6 μm at Cu/Cu wire bonds, and a Cu/Cu wire bond pad diameter of up to 120 μm. The FET has a low on-resistance of less than 2 mΩ·cm² and a low leakage current of less than 1 μA/cm² at 25°C.

The LM5175PWPR FET is protected from overcurrents by means of a current-limiting function that shuts off the FET when the current exceeds a preset limit. The FET is also protected from short circuits by means of a crowbar function that clamps the FET voltage to zero when the FET is shorted. The LM5175PWPR FET can withstand a continuous load current of up to 3 A with an output voltage of up to 200V.

The LM5175PWPR FET is suitable for use in various DC/DC converter topologies such as half-bridge, full-bridge, push-pull, and single-ended converter circuits for AC or DC output applications up to 200V. The FET can be used in conjunction with various types of control ICs to provide advanced control functions such as voltage feedforward and hysteresis control. The LM5175PWPR FET is also protected against UVLO, shorted input/output elements (the elements between input/output ports are shorted), reverse voltage applied at the output terminals (more than output source), overcurrent conditions, and other potential faults.